Catalog > Semiconductors > Discrete Semiconductors > Transistors STP55NF06 STP55NF06 SIP MOS N-CH 60V 50A TO220 RDS= 0,018R 17.10 ZAR inc for 1 Each 0 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 60V Continuous Drain Current Id: 50A Drain Source On State Resistance: 0.015ohm On Resistance Rds(on): 0.015ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 30W Power Dissipation: 30W No. of Pins: 3Pins Operating Temperature Max: 175°C Downloads Datasheet - STP55NF06 PDF File 793.10 KB