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SIP MOS N-CH 200V 31A 0,082R TO220 [IRFB31N20D]
SIP MOS N-CH 200V 31A 0,082R TO220 [IRFB31N20D]

SIP MOS N-CH 200V 31A 0,082R TO220

SIP MOS N-CH Transistor

IRFB31N20D
SIP MOS N-CH 200V 31A 0,082R TO220
39.90 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 31
Maximum Drain Source Resistance (mOhm) 82@10V
Typical Gate Charge @ Vgs (nC) 70@10V
Typical Gate Charge @ 10V (nC) 70
Typical Input Capacitance @ Vds (pF) 2370@25V
Maximum Power Dissipation (mW) 3100
Typical Fall Time (ns) 10
Typical Rise Time (ns) 38
Typical Turn-Off Delay Time (ns) 26
Typical Turn-On Delay Time (ns) 16
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Mounting Through Hole
Package Height 8.77(Max)
Package Width 4.69(Max)
Package Length 10.54(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Pin Count 3
Lead Shape Through Hole

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