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P 60V 60V 3A 5V 30W 40MN TO126 Transistor [BD178]
P 60V 60V 3A 5V 30W 40MN TO126 Transistor [BD178]

Transistor Silicon NPN

Transistor

BD178
P 60V 60V 3A 5V 30W 40MN TO126 Transistor
2.62 ZAR
inc
for 1 Each
170 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO126
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Min hFE 15
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 800m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 135 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40