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P 80V 80V 4A 40MN TOP66 [BD538]
P 80V 80V 4A 40MN TOP66 [BD538]

P 80V 80V 4A 40MN TOP66

Transistor

BD538
P 80V 80V 4A 40MN TOP66
5.70 ZAR
inc
for 1 Each
61 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 40
  • Package: TO220

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