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Transistor Silicon PNP [2SB537]
Transistor Silicon PNP [2SB537]

Transistor Silicon PNP

Transistor

2SB537
Transistor Silicon PNP
8.19 ZAR
inc
for 1 Each
57 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO220
Vbr CBO 130
Vbr CEO 120
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 2.0
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 4-43
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 18 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 80