Catalog > Semiconductors > Discrete Semiconductors > Transistors SI-P 50V 0.2A 0.5W Bipolar Junction Transistor BC557B SI-P 50V 0.2A 0.5W 1.08 ZAR inc for 1 Each 1432 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -45 V Collector-Base Voltage, max: -50 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.1 A Collector Dissipation: 0.5 W DC Current Gain (hfe): 200 to 450 Transition Frequency, min: 150 MHz Noise Figure, max: 2 dB Operating and Storage Junction Temperature Range: -65 to +150 °C Package: TO-92 Additional Information Polarity PNP Material Silicon Power Dissipation 0.5A