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N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC [SIHG80N60EF-GE3]
N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC [SIHG80N60EF-GE3]

N-CH MOSFET 600V 80A Rds

N-CH 600V 80A Rds MOSFET

SIHG80N60EF-GE3
N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC
108.30 ZAR
inc
for 1 Each
13 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

FET Type
 N-Channel
Technology
 MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 100 V
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
 TO-247-3

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