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P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L [NCE01P30K]
P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L [NCE01P30K]

P-Channel Enhancement Mode Power Mosfet

P-Channel Enhancement Mode Power Mosfet

NCE01P30K
P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L
25.65 ZAR
inc
for 1 Each
13 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • VDS =-100V,ID =-30A
    • RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ)
    • RDS(ON) <65mΩ @ VGS=-10V (Typ:48mΩ)
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance

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