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Si NPN Power BJT 1 MHz 10A 330V [BU110]
Si NPN Power BJT 1 MHz 10A 330V [BU110]

BU110

BU110
Si NPN Power BJT 1 MHz 10A 330V
28.50 ZAR
inc
for 1 Each
110 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 60 W
  • Maximum Collector-Base Voltage |Vcb|: 330 V
  • Maximum Collector-Emitter Voltage |Vce|: 150 V
  • Maximum Emitter-Base Voltage |Veb|: 6 V
  • Maximum Collector Current |Ic max|: 10 A
  • Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics

  • Transition Frequency (ft): 15 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 8
  • Package: TO3