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P 80V 80V 4A 15MN TO126 [BD442]
P 80V 80V 4A 15MN TO126 [BD442]

P 80V 80V 4A 15MN TO126

Transistor

BD442
P 80V 80V 4A 15MN TO126
3.14 ZAR
inc
for 1 Each
29 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 36 W
  • Maximum Collector-Base Voltage |Vcb|: 80 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 3 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 15
  • Package: TO126