Catalog > Semiconductors > Discrete Semiconductors > Transistors P 80V 20A 150W 4MHz TO-3-2 Transistor 2N5880 P 80V 20A 150W 4MHz TO-3-2 Transistor 10.81 ZAR inc for 1 Each 8 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Mounting Style: Through Hole Package/Case: TO-3-2 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 30 A Pd - Power Dissipation: 160 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Packaging: Tube Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 100 at 4 A, 4 V