Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor BF469 SI-N VID-Low Power 250V 0,03A TO220 3.36 ZAR inc for 1 Each 13 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CBO 250 Vbr CEO 250 Max. PD (W) 1.8 Min hFE 50 Ic Max. (A) 100m @Ic (test) (A) 25m Icbo Max. @Vcb Max. (A) 10n Polarity NPN R(sat) (Û) 800m- Derate Above 25°C 50m Trans. Freq (Hz) Min. 60M Oper. Temp (°C) Max. 140 @VCE (V) 20 Pinout Equivalence Number 3-10 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 2 W Maximum Collector-Base Voltage |Vcb| 250 V Maximum Collector-Emitter Voltage |Vce| 250 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 0.03 A Max. Operating Junction Temperature (Tj) 150 °C Transition Frequency (ft): 60 MHz Forward Current Transfer Ratio (hFE), MIN 50