Catalog > Semiconductors > Discrete Semiconductors > Transistors P 80V 65V 100MA 250MW SOT23 Bipolar Junction Transistor BC856B P 80V 65V 100MA 250MW SOT23 0.91 ZAR inc for 1 Each 525 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Type PNP Maximum DC Collector Current -100 mA Maximum Collector Emitter Voltage -65 V Package Type SOT-23 (TO-236AB) Mounting Type Surface Mount Maximum Power Dissipation 250 mW Minimum DC Current Gain 220 Transistor Configuration Single Maximum Collector Base Voltage 80 V Maximum Emitter Base Voltage 5 V Maximum Operating Frequency 100 MHz Pin Count 3 Number of Elements per Chip 1 Dimensions 1 x 3 x 1.4mm Maximum Operating Temperature +150 °C