Catalog > Semiconductors > Discrete Semiconductors > Transistors IGBT 650V 60A 375W TO247 Transistor STGW60H65DFB IGBT 650V 60A 375W TO247 131.10 ZAR inc for 1 Each 0 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Voltage - Collector Emitter Breakdown (Max) 650 V Current - Collector (Ic) (Max) 80 A Current - Collector Pulsed (Icm) 240 A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A Power - Max 375 W Switching Energy 1.09mJ (on), 626µJ (off) Input Type Standard Gate Charge 306 nC Td (on/off) @ 25°C 51ns/160ns Test Condition 400V, 60A, 5Ohm, 15V Reverse Recovery Time (trr) 60 ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 Downloads Datasheet - STGW60H65DFB PDF File 1.43 MB