Catalog > Semiconductors > Discrete Semiconductors > Transistors SIP MOSFET N-Channel Transistor Transistor IRFU120 SIP MOSFET N-Channel 100V 7,7A 1,5WATT I-PAK 10.03 ZAR inc for 1 Each 37 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251AA