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N 60V 7A 115W TO3 [2N5873]
N 60V 7A 115W TO3 [2N5873]

N 60V 7A 115W TO3

Transistor

2N5873
N 60V 7A 115W TO3
102.60 ZAR
inc
for 1 Each
43 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 100 W
  • Maximum Collector-Base Voltage |Vcb|: 60 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 15 A
  • Max. Operating Junction Temperature (Tj): 200 °C
  • Transition Frequency (ft): 4 MHz
  • Collector Capacitance (Cc): 300 pF
  • Forward Current Transfer Ratio (hFE), MIN: 20

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