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N 30V 20V 100MA 200MN X10 Transistor [BC239B]
N 30V 20V 100MA 200MN X10 Transistor [BC239B]

Transistor Silicon NPN

Transistor

BC239B
N 30V 20V 100MA 200MN X10 Transistor
0.57 ZAR
inc
for 1 Each
1512 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Collector Power Dissipation (Pc): 0.3 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 20 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

  • Transition Frequency (ft): 150 MHz
  • Collector Capacitance (Cc): 5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 200
  • Package: TO92