Catalog > Semiconductors > Discrete Semiconductors > Transistors IGBT 600V 120A 60W TO247AB IGBT Transistor FGH60N60SMD IGBT 600V 120A 60W TO247AB 131.10 ZAR inc for 1 Each 7 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Package/Case : TO-247 Mounting Style : Through Hole Collector- Emitter Voltage VCEO Max : 600 V Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : 20 V Continuous Collector Current at 25 C : 120 A Pd - Power Dissipation : 600 W Minimum Operating Temperature : + 150 C Maximum Operating Temperature: + 150 C Series : FGH60N60SMD Gate-Emitter Leakage Current : 400 nA Factory Pack Quantity : 450 Subcategory : IGBTs Unit Weight : 6.390 g