Catalog > Semiconductors > Discrete Semiconductors > Transistors P 250V 250V 200MA 50MN TO92 200ma 50min TO92 Transistor BF423 P 250V 250V 200MA 50MN TO92 1.41 ZAR inc for 1 Each 4884 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.83 W Maximum Collector -Base Voltage |Vcb|: 250 V Maximum Collector-Emitter Voltage |Vce|: 250 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 60 MHz Collector Capacitance (Cc): 1.6 pF Forward Current Transfer Ratio (hFE), MIN: 50 Noise Figure, dB: - Package: TO92