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P 100V 20A DARLGTN 100W TO3P [2SB1079]
P 100V 20A DARLGTN 100W TO3P [2SB1079]

P 100V 20A DARLGTN 100W TO3P

Transistor

2SB1079
P 100V 20A DARLGTN 100W TO3P
25.65 ZAR
inc
for 1 Each
11 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Polarity : PNP Darlington
  • Package : TO‑3P
  • Max Collector‑Base Voltage (VCBO) : –100 V
  • Max Collector‑Emitter Voltage (VCEO)    –80 V (Hitachi); sustaining –100 V (ISC) 
  • Max Emitter‑Base Voltage (VEBO) : –5 V
  • Max Collector Current (IC) : –20 A
  • Max Collector Power Dissipation (Pc) : 100 W
  • DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A 
  • hFE Max : ~20 k (source: LittleDiode) 
  • Max Junction Temperature (Tj) : 175 °C