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IGBT Module - N Channel - Hi Rel. Hi Speed Low Loss 800A 3K3V [MBN800E33E]
IGBT Module - N Channel - Hi Rel. Hi Speed Low Loss 800A 3K3V [MBN800E33E]

IGBT N Channel Module

IGBT N Channel Module

MBN800E33E
IGBT Module - N Channel - Hi Rel. Hi Speed Low Loss 800A 3K3V
7,358.70 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.
  • Low driving power due to low input capacitance MOS gate.
  • Low noise recovery: Ultra soft fast recovery diode.
  • High thermal fatigue durability: (delta Tc=70K, N>30,000cycles) AlSiC base-plate/AlN substrate

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