Catalog > Semiconductors > Discrete Semiconductors > Transistors P 100V 6A 60W 13MHZ Bipolar Junction Transistor 2SB775 P 100V 6A 60W 13MHZ 13.97 ZAR inc for 1 Each 55 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type: PNP Collector-Emitter Voltage, max: -85 V Collector-Base Voltage, max: -100 V Emitter-Base Voltage, max: -6 V Collector Current − Continuous, max: -6 A Collector Dissipation: 60 W DC Current Gain (hfe): 60 to 200 Transition Frequency, min: 18 MHz Operating and Storage Junction Temperature Range: -45 to +150 °C Package: TO-3P Additional Information Polarity PNP Material Silicon Power Dissipation 60A