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IGBT 600V 90A 328.9W TO247A High Speed Transistor [RJH60F7]
IGBT 600V 90A 328.9W TO247A High Speed Transistor [RJH60F7] IGBT 600V 90A 328.9W TO247A High Speed Transistor [RJH60F7]

IGBT Transistor

IGBT Transistor

RJH60F7
IGBT 600V 90A 328.9W TO247A High Speed Transistor
131.10 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

  • Low collector to emitter saturation voltage
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High speed switching

Specifications

  • Collector to Emitter Voltage : 600V
  • Gate to Emitter Voltage : ±30V
  • Collector Current : 90A
  • Collector Peak Current : 180A
  • Collector to emitter diode forward peak current: 100A
  • Collector dissipation : 328.4W
  • Junction to case thermal impedance (IGBT) : 0.98°C/W
  • Junction to case thermal impedance (Diode): 1.1°C/W
  • Junction Temperature : 150°C
  • Storage Temperature : -55°C to 150°C

Additional Information

Polarity N-Channel
Material Silicon

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