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N-CH Mosfet 10.1A 650V 1.4 Ω 86W TO220FP [IPA65R650CEXKSA1]
N-CH Mosfet 10.1A 650V 1.4 Ω 86W TO220FP [IPA65R650CEXKSA1]

N-CH Mosfet 10.1A 650V

Transistor

IPA65R650CEXKSA1
N-CH Mosfet 10.1A 650V 1.4 Ω 86W TO220FP
15.39 ZAR
inc
for 1 Each
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Features

FET Type
 N-Channel
Technology
 MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole

Downloads

PDF File
1.13 MB