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N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm [IRFB4410]
N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm [IRFB4410]

N-MOSFET 100V 97A 230W TO220

Transistor

IRFB4410
N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm
37.05 ZAR
inc
for 1 Each
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Features

Channel Type N
Maximum Continuous Drain Current 88 A
Maximum Drain Source Voltage 100 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 10 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 200 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +175 °C
Length 10.66mm
Width 4.82mm
Transistor Material Si
Typical Gate Charge @ Vgs 120 nC @ 10 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 9.02mm
Series HEXFET

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