Catalog > Semiconductors > Discrete Semiconductors > Transistors Diodes Incorporated Bipolar Transistor Bipolar Transistor ZTX502 Transistor Call for Price Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 35 V Maximum Collector-Emitter Voltage |Vce|: 35 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.5 A Max. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 150 MHz Collector Capacitance (Cc): 6 pF Forward Current Transfer Ratio (hFE), MIN: 100