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P 60V 50V 200MA 200MN X10 Transistor [BC212B]
P 60V 50V 200MA 200MN X10 Transistor [BC212B]

Transistor Silicon NPN

Transistor

BC212B
P 60V 50V 200MA 200MN X10 Transistor
0.93 ZAR
inc
for 1 Each
7 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Collector Power Dissipation (Pc): 0.3 W
  • Maximum Collector-Base Voltage |Vcb|: 60 V
  • Maximum Collector-Emitter Voltage |Vce|: 50 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.2 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 200 MHz
  • Collector Capacitance (Cc): 9 pF
  • Forward Current Transfer Ratio (hFE), MIN: 200