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P 64V 60V 250MA 10MN TO39 Transistor [BCY39]
P 64V 60V 250MA 10MN TO39 Transistor [BCY39]

Transistor Silicon PNP

Transistor

BCY39
P 64V 60V 250MA 10MN TO39 Transistor
3.24 ZAR
inc
for 1 Each
137 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO5
Vbr CBO 64
Vbr CEO 64
Max. PD (W) 410m
Derate (Amb) (W/°C) 3.3m
hfe 35
Ic Max. (A) 250m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.41 W
Maximum Collector-Base Voltage |Vcb| 64 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.25 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 0.45 MHz
Forward Current Transfer Ratio (hFE), MIN 10