Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor BD535 N 60V 4A 50W TO220 Transistor 11.70 ZAR inc for 1 Each 42 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO220 Manufacturer ST Microelectronics - STM Vbr CBO 60 Vbr CEO 60 Max. PD (W) 50 Min hFE 25 Ic Max. (A) 8.0 @Ic (test) (A) 2.0 Polarity NPN Trans. Freq (Hz) Min. 3.0M Oper. Temp (°C) Max. 140 @VCE (V) 2.0i Pinout Equivalence Number N/A Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 40 W Maximum Collector-Base Voltage |Vcb| 60 V Maximum Collector-Emitter Voltage |Vce| 60 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 4 A Max. Operating Junction Temperature (Tj) 150 °C Transition Frequency (ft): 3 MHz Forward Current Transfer Ratio (hFE), MIN 40