Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon PNP Transistor BD680A P-DARL+Di 80V 4A 40W TO126 Transistor 4.38 ZAR inc for 1 Each 1369 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CEO 80 Max. PD (W) 40 t(on) Delay (S) 1.5u t(f) Max. (S) 5.0u+ Min hFE 750 Ic Max. (A) 4.0 @Ic (test) (A) 1.5 Icbo Max. @Vcb Max. (A) 200u Mat. Silicon Logic Polarity PNP Tr Max. (s) 15n R(sat) (Û) 1.6 Derate Above 25°C 320m Trans. Freq (Hz) Min. 1.0M @VCE (test) 3.0 Oper. Temp (°C) Max. 150 Pinout Equivalence Number 3-35 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 40 W Maximum Collector-Base Voltage |Vcb| 80 V Maximum Collector-Emitter Voltage |Vce| 80 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 4 A Max. Operating Junction Temperature (Tj) 150 °C Transition Frequency (ft): 1 MHz Forward Current Transfer Ratio (hFE), MIN 750