Catalog > Semiconductors > Discrete Semiconductors > Transistors NPN - Darlington 100 V 4 A Transistor Transistor BD681 N-DARL+Di 100V 4A 40W TO126 5.13 ZAR inc for 1 Each 83 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4 A Voltage - Collector Emitter Breakdown (Max) 100 V Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max) 500µA DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V Power - Max 40 W Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package SOT-32-3