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Transistor [2SB596]
Transistor [2SB596]

Transistor Silicon PNP

Transistor

2SB596
Transistor
4.23 ZAR
inc
for 1 Each
21 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO220
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 240
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 30u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40