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SIP MOS N 600V 3,6A 80W 2,5R TO220 [BUZ93]
SIP MOS N 600V 3,6A 80W 2,5R TO220 [BUZ93]

Transistor

Transistor

BUZ93
SIP MOS N 600V 3,6A 80W 2,5R TO220
12.05 ZAR
inc
for 1 Each
24 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Power Dissipation: 80 W
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 3.6 A
  • Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Rise Time: 50 nS
  • Output Capacitance: 65 pF
  • Maximum Drain-Source On-State Resistance: 2.5 Ohm
  • Package: TO-220AB