1. Catalog
    2. >
  2. Semiconductors
    3. >
  3. Discrete Semiconductors
    4. >
  4. Transistors
N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm [IRFB4110]
N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm [IRFB4110]

N-Channel MOSFET Power Transistor

Transistor

IRFB4110
N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm
96.90 ZAR
inc
for 1 Each
14 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Power Dissipation: 370 W
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 180 A
  • Maximum Junction Temperature: 175 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Total Gate Charge: 150 nC
  • Rise Time: 67 nS
  • Output Capacitance: 670 pF
  • Maximum Drain-Source On-State Resistance: 0.0045 Ohm