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Transistor Silicon PNP [2SA643]
Transistor Silicon PNP [2SA643]

Transistor Silicon PNP

Transistor

2SA643
Transistor Silicon PNP
1.48 ZAR
inc
for 1 Each
22 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Vbr CBO 40
Vbr CEO 20
Max. PD (W) 500m
Derate (Amb) (W/°C) 2.5m
hfe 120
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz