Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor BD131 N 70V 45V 3A 40MN TO126 6.70 ZAR inc for 1 Each 91 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CBO 1.0k Vbr CEO 1.0k Ckts Per Dev. 1 Max. PD (W) 15 t(f) Max. (S) 3.0u Min hFE 100 Ic Max. (A) 3.0 @Ic (test) (A) 50 Icbo Max. @Vcb Max. (A) 5.0u Polarity NPN Tr Max. (s) 3.0u R(sat) (Û) 800m Therm Res. (J-C) 300m Derate Above 25°C 166m VCE(sat) Max. 2.5 Trans. Freq (Hz) Min. 60M Oper. Temp (°C) Max. 125 @VCE (V) 12 Isolated Case (Y/N) Yes Pinout Equivalence Number 3-15 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 11 W Maximum Collector-Base Voltage |Vcb| 70 V Maximum Collector-Emitter Voltage |Vce| 45 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 3 A Max. Operating Junction Temperature (Tj) 125 °C Transition Frequency (ft): 60 MHz Forward Current Transfer Ratio (hFE), MIN 40