Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor 2N916 Transistor Call for Price Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Type Transistor Silicon NPN Case TO18 Vbr CBO 45 Vbr CEO 25 Max. PD (W) 360m C(ob) (F) 6.0p Derate (Amb) (W/°C) 2.1m hfe 3.0 Icbo Max. @Vcb Max. (A) 10n Polarity NPN @VCE (test) (V) 15 Oper. Temp (°C) Max. 200 @Ic (A) 10m Pinout Equivalence Number 3-12 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 0.36 W Maximum Collector-Base Voltage |Vcb| 45 V Maximum Collector-Emitter Voltage |Vce| 25 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 0.1 A Max. Operating Junction Temperature (Tj) 175 °C Collector Capacitance (Cc) 6 pF Transition Frequency (ft): 300 MHz Forward Current Transfer Ratio (hFE), MIN 50