Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor BD440 P 60V 60V 4A 25MN TO126 Transistor 3.14 ZAR inc for 1 Each 129 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CBO 60 Vbr CEO 60 Max. PD (W) 36 Derate (Amb) (W/°C) 288m Min hFE 20 Ic Max. (A) 4.0 @Ic (test) (A) 10m Icbo Max. @Vcb Max. (A) 100u Polarity PNP R(sat) (Û) 400m Trans. Freq (Hz) Min. 3.0M Oper. Temp (°C) Max. 150 @VCE (V) 5.0 Pinout Equivalence Number 3-10 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 36 W Maximum Collector-Base Voltage |Vcb| 60 V Maximum Collector-Emitter Voltage |Vce| 60 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 4 A Max. Operating Junction Temperature (Tj) 150 °C Transition Frequency (ft): 3 MHz Forward Current Transfer Ratio (hFE), MIN 25