Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Transistor BD682 P-DARL+Di 100V 4A 40W TO126 9.41 ZAR inc for 1 Each 1 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 4 A Max. Operating Junction Temperature (Tj): 150 °C Electrical Characteristics Transition Frequency (ft): 1 MHz Forward Current Transfer Ratio (hFE), MIN: 750 Package: TO126