Catalog > Semiconductors > Discrete Semiconductors > Transistors N-Channel 200 V MOSFET Transistor Transistor IRF630 SIP MOS N 200V 9A 0,4R TO220 15.39 ZAR inc for 1 Each 1 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V Power Dissipation (Max) 75W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220