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SIP MOS N 200V 9,9A 78W 0,40R Transistor [BUZ35]

N-Channel Mosfet Transistor

Transistor

BUZ35
SIP MOS N 200V 9,9A 78W 0,40R Transistor
34.54 ZAR
inc
for 1 Each
3 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Power Dissipation: 78 W
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Drain Current: 9.9 A
  • Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain-Source On-State Resistance: 0.4 Ohm
  • Package: TO3