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N 250V 250V 60A 10MN TO3 [BUR52]
N 250V 250V 60A 10MN TO3 [BUR52]

Transistor Silicon NPN

Transistor

BUR52
N 250V 250V 60A 10MN TO3
171.00 ZAR
inc
for 1 Each
3 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO3
Vbr CBO 350
Vbr CEO 250
Max. PD (W) 350
t(f) Max. (S) .60u
Max. hFE 100
Min hFE 20
Ic Max. (A) 60
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) .20m
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 16M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 350 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20