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5V 60V 40MN 1 A TO126 Transistor Silicon NPN [BD137]
5V 60V 40MN 1 A TO126 Transistor Silicon NPN [BD137]

Transistor Silicon NPN

Transistor

BD137
5V 60V 40MN 1 A TO126 Transistor Silicon NPN
1.92 ZAR
inc
for 1 Each
281 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO126
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 8.0
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 250M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40