1. Catalog
    2. >
  2. Semiconductors
    3. >
  3. Discrete Semiconductors
    4. >
  4. Transistors
N 250V 250V 100MA 25MN TO39 Transistor [BF258]
N 250V 250V 100MA 25MN TO39 Transistor [BF258]

Transistor Silicon NPN

Transistor

BF258
N 250V 250V 100MA 25MN TO39 Transistor
3.25 ZAR
inc
for 1 Each
248 in Stock
Add
Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

Case TO39
Vbr CBO 250
Vbr CEO 250
Max. PD (W) 5.0
Min hFE 25
Ic Max. (A) 100m
@Ic (test) (A) 30m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
R(sat) (Û) 33m
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 90M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 55 MHz
Forward Current Transfer Ratio (hFE), MIN 25