Catalog > Semiconductors > Discrete Semiconductors > Transistors 80V 1A 100MN NPN Transistor 80V 1A 100MN NPN Transistor 2N3019 N 140V 80V 1A 100MN NPN Transistor (TO-39 Metal Can) 9.12 ZAR inc for 1 Each 1 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Features A medium-voltage, medium-current transistor used for: Signal amplification Driver stages RF/IF circuits Switching up to 1 A Oscillators and control electronics Faster than many basic power transistors due to ~100 MHz ft. Typical applications Audio driver stages RF amplifiers Small power switching Control circuits Instrumentation Vintage telecom or military boards Specifications Polarity: NPN Collector-Emitter voltage (Vceo): 80 V Collector-Base voltage (Vcbo): 140 V Emitter-Base voltage (Vebo): ≈6 V Collector current (Ic max): 1 A Power dissipation: ≈800 mW – 1 W (depending on heatsinking) Gain (hFE): typically 30–150 Transition frequency (ft): ~100 MHz Package: TO-39 metal can Operating temp: up to ~150 °C