Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Transistor 2SB1166 P 60V 8A 20W 130Mhz 8.55 ZAR inc for 1 Each 37 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Case TO126 Vbr CBO 55 Vbr CEO 45 Max. PD (W) 40 Derate (Amb) (W/°C) 320m Min hFE 40 Ic Max. (A) 4.0 @Ic (test) (A) 500m Icbo Max. @Vcb Max. (A) 100u Polarity PNP R(sat) (Û) 500m Trans. Freq (Hz) Min. 2.0M Oper. Temp (°C) Max. 140 @VCE (V) 2.0 Pinout Equivalence Number 3-10 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 40 W Maximum Collector-Base Voltage |Vcb| 55 V Maximum Collector-Emitter Voltage |Vce| 45 V Maximum Emitter-Base Voltage |Veb| 5 V Maximum Collector Current |Ic max| 4 A Max. Operating Junction Temperature (Tj) 135 °C Transition Frequency (ft): 2 MHz Forward Current Transfer Ratio (hFE), MIN 40