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SIP MOS N-Channel 500V 4,5A TO220 [IRF830]
SIP MOS N-Channel 500V 4,5A TO220 [IRF830]

N - Chennel PowerMOS Transistor

Transistor

IRF830
SIP MOS N-Channel 500V 4,5A TO220
14.25 ZAR
inc
for 1 Each
21 in Stock
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Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Specifications

  • Maximum Power Dissipation: 100 W
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 4.5 A
  • Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Total Gate Charge: 22 nC
  • Rise Time: 8 nS
  • Output Capacitance: 120 pF
  • Maximum Drain-Source On-State Resistance: 1.5 Ohm
  • Package: TO220