Catalog > Semiconductors > Discrete Semiconductors > Transistors Silicon NPN Power Transistor Transistor BUW86 N 450V 1000V 2A SOT82 Transistor 24.08 ZAR inc for 1 Each 10 in Stock Add Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Collector Power Dissipation (Pc): 62 W Maximum Collector-Base Voltage |Vcb|: 150 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 175 °C Electrical Characteristics Transition Frequency (ft): 30 MHz Forward Current Transfer Ratio (hFE), MIN: 30