• Transistor type: NPN BJT
• Material: Silicon
• Package: TO-39 (metal can, 3-pin)
• Collector-Emitter Voltage (VCE): 150 V
• Collector-Base Voltage (VCB): 250 V
• Emitter-Base Voltage (VEB): 6 V
• Maximum Collector Current (IC): 3 A
• Collector Power Dissipation (PC): 1 W
• DC Current Gain (hFE): ≈ 30
• Transition Frequency (fT): 15 MHz
• Maximum Junction Temperature: 125 °C

Pin Configuration (TO-39 package)

• Emitter
• Base
• Collector (connected to the metal case in many versions)

Typical Applications

• Power switching circuits
• Voltage regulators
• Linear amplifiers
• Industrial control electronics
• Older TV and power supply circuits