Catalog > Semiconductors > Discrete Semiconductors > Transistors High-Voltage NPN Silicon Power Transistor Transistor High-Voltage NPN Silicon Power Transistor Part No: BU109 9.92 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Features High voltage switching capability Designed for line output / horizontal deflection stages Fast switching performance High reliability for inductive loads Typical Applications CRT television horizontal output stage High-voltage switching circuits Power switching in industrial electronics Flyback transformer driver circuits Pin Configuration (TO-3 Package) Case:Collector Pin 1:Base Pin 2:Emitter If you want, I can also provide: Equivalent / replacement transistors for BU109 Full datasheet values (switching times, safe operating area, etc.) Comparison with BU208, BU508, BU508A(commonly used substitutes). Specifications Transistor Type: NPN Silicon Power Transistor Package: TO-3 metal case Collector-Emitter Voltage (VCEO): 700 V (max) Collector-Base Voltage (VCBO): 1500 V (max) Emitter-Base Voltage (VEBO): 5 V (max) Collector Current (IC): 8 A (continuous) Peak Collector Current (ICM): 15 A Power Dissipation (Pc): 75 W DC Current Gain (hFE): 5 – 20 Transition Frequency (fT): ~4 MHz Operating Junction Temperature: −65 °C to +150 °C